Texas Instruments (TI) has announced the launch of production for gallium nitride (GaN)-based power semiconductors at its new factory in Aizu, Japan. This expansion, alongside its existing facility in Dallas, Texas, will quadruple TI’s internal manufacturing capacity for GaN semiconductors, enhancing the company’s position in the semiconductor market.
With over a decade of experience in GaN chip design and manufacturing, TI has qualified its 200mm GaN technology for mass production, which is expected to increase internal manufacturing to over 95 per cent by 2030.
TI’s GaN semiconductors are designed to deliver energy-efficient and reliable performance in compact sizes, making them ideal for applications like laptop power adapters, energy-efficient motors, and more.
Utilising advanced GaN manufacturing technology, TI’s new capacity not only improves product performance and manufacturing efficiency but also offers cost advantages and environmental benefits through reduced resource use.
TI is also preparing to scale its GaN chips to higher voltages, responding to growing market demands for energy-efficient solutions. This initiative aligns with TI’s commitment to sustainable manufacturing, aiming for 100 per cent renewable electricity in its U.S. operations by 2027 and globally by 2030.
