Future Electronics, a global leader in electronics components distribution, is excited to announce a live webinar dedicated to exploring Infineon’s latest advancements in low voltage (LV) metal–oxide–semiconductor field-effect transistor (MOSFET) technology for industrial applications. This one-hour session, scheduled for Tuesday, October 22nd, 2024, at 10:00 CET, will provide power designers with key insights into achieving the perfect balance between price and performance in their designs.
Infineon’s latest LV MOSFETs are engineered to meet the demanding requirements of industrial applications, including enhanced power density and a wide safe-operating-area (SOA). Attendees will learn from Future Electronics and Infineon representatives how these technologies can help optimize price-performance ratios in various power design scenarios.
During the webinar, participants will have the opportunity to explore the capabilities of Infineon’s silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) technologies. They will also learn about the OptiMOS™ range, designed for high-switching frequency applications, and the next generation of LV Si MOSFETs. Additionally, representatives from Future Electronics and Infineon will explain how StrongIRFET™ 2, with its improved RDS(on) and total gate charge (Qg), can enhance existing designs with minimal resources.
Future Electronics has always been dedicated to providing engineers with the latest technological insights and tools to succeed in their projects. Infineon’s OptiMOS products have long been the benchmark for high-performance applications, and the new StrongIRFET 2 series continues this tradition, offering significant advancements for industrial applications.
